MULTIPLICATION FACTORS AND BREAKDOWN VOLTAGES OF SILICON READ DIODES WITH WIDE DEPLETION REGIONS.BEHRENDT R.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 27; NO 2; PP. 489-498; ABS. ALLEM.; BIBL. 12 REF.Article

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POWER LOSSES AND OPTIMUM OPERATION CONDITIONS OF SILICON QUASI-READ DIODESMAU CHUNG CHANG; MAO CHIENCHEN.1980; SOLID-STATE ELECTRON; GBR; DA. 1980; VOL. 23; NO 6; PP. 621-626; BIBL. 10 REF.Article

ANALYSIS OF LARGE-SIGNAL NOISE IN READ OSCILLATORSSJOLUND A.1972; SOLID-STATE ELECTRON.; G.B.; DA. 1972; VOL. 15; NO 9; PP. 971-978; BIBL. 13 REF.Serial Issue

ANALYTIC NONLINEAR STUDY ON READ DIODE AVALANCHE REGIONNIGRIN J.1972; PROC. I.E.E.E.; U.S.A.; DA. 1972; VOL. 60; NO 7; PP. 916-917; BIBL. 7 REF.Serial Issue

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C.W. OPERATION OF ION-IMPLANTED GAAS READ-TYPE IMPATT DIODES.BERENZ JJ; YING RS; LEE DH et al.1974; ELECTRON. LETTERS; G.B.; DA. 1974; VOL. 10; NO 9; PP. 157-158; BIBL. 6 REF.Article

DOUBLE VELOCITY IMPATT DIODESADLERSTEIN MG; STATZ H.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 5; PP. 817-819; BIBL. 9 REF.Article

HIGH-POWER PULSED GAAS DOUBLE-DRIFT HYBRID-READ IMPATT DIODES FOR X-BANDBERENZ JJ; KINOSHITA J; HIERL TL et al.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 10; PP. 277-278; BIBL. 5 REF.Article

HIGH-POWER C BAND READ IMPATT DIODES.ADLERSTEIN MG; WALLACE RN; STEELE SR et al.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 18; PP. 430-431; BIBL. 3 REF.Article

HIGH-POWER HIGH-EFFICIENCY OPERATION OF READ-TYPE IMPATT-DIODE OSCILLATORSKIM C; STEELE R; BIERIG R et al.1973; ELECTRON. LETTERS; G.B.; DA. 1973; VOL. 9; NO 8-9; PP. 173-174; BIBL. 8 REF.Serial Issue

MILLIMETER-WAVE SILICON IMPATT SOURCES AND COMBINERS FOR THE 110-260-GHZ RANGEKAI CHANG; THROWER WF; HAYASHIBARA GM et al.1981; IEEE TRANS. MICROWAVE THEORY TECH.; ISSN 0018-9480; USA; DA. 1981; VOL. 29; NO 12; PP. 1278-1284; BIBL. 9 REF.Article

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AVALANCHE DIODE OSCILLATORS. I. BASIC CONCEPTS.CULSHAW B; GIBLIN RA; BLAKEY PA et al.1974; INTERNATION. J. ELECTRON.; G.B.; DA. 1974; VOL. 37; NO 5; PP. 577-632; BIBL. 33 REF.Article

CONDUCTION CURRENT INJECTION DELAY IN RED GAAS IMPATT DIODESADLERSTEIN MG; STATZ H.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 3; PP. 234-236; BIBL. 13 REF.Article

SMALL-SIGNAL CHARACTERISTICS OF A READ DIODE UNDER CONDITIONS OF FIELD-DEPENDENT VELOCITY AND FINITE REVERSE SATURATION CURRENT.WANG YC.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 4; PP. 609-615; BIBL. 8 REF.Article

CARRIER TRANSPORT IN THE DRIFT REGION OF READ-TYPE DIODESKUVAS RL.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 6; PP. 660-666; BIBL. 15 REF.Article

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STATE OF THE ART OF GAAS IMPATT DIODESMATTHEI WG.1973; MICROWAVE J.; U.S.A.; DA. 1973; VOL. 16; NO 6; PP. 29-36 (7 P.)Serial Issue

HIGH EFFICIENCY PULSED GAAS READ IMPATT DIODES.HIERL TL; BERENZ JJ; KINOSHITA J et al.1978; ELECTRON. LETTERS; G.B.; DA. 1978; VOL. 14; NO 5; PP. 155-157; BIBL. 3 REF.Article

A 60-W CW SOLID-STATE OSCILLATOR AT C BAND.WALLACE RN; ADLERSTEIN MG; STEELE SR et al.1976; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1976; VOL. 24; NO 7; PP. 483-485; BIBL. 7 REF.Article

Compensation of microwave properties of silicon double-drift read diode for high bias current operationPATI, S. P.Semiconductor science and technology. 1992, Vol 7, Num 3, pp 352-356, issn 0268-1242Article

A 12-W GAAS READ-DIODE AMPLIFIER AT X BANDTSERNG HQ; COLEMAN DJ JR; DOERBECK FH et al.1978; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; USA; DA. 1978; VOL. 26; NO 10; PP. 774-778; BIBL. 14 REF.Article